MMG600K170U6EN Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG600K170U6EN
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 3480 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 800 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tj ⓘ - Максимальная температура перехода: 100 ℃
Qg ⓘ - Общий заряд затвора, typ: 7000 nC
Тип корпуса: MODULE
Аналог (замена) для MMG600K170U6EN
MMG600K170U6EN Datasheet (PDF)
mmg600k170u6en.pdf

MMG600K170U6EN1700V 600A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery 5K Gate Protected Resistance InsideAPP
mmg600k120u6hn.pdf

MMG600K120U6HN1200V 600A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los
mmg600k120u6tn.pdf

MMG600K120U6TN 1200V 600A IGBT Module December 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 10K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE
mmg600k060u6en.pdf

MMG600K060U6EN600V 600A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
Другие IGBT... MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , IRGB20B60PD1 , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN .
History: MIXA40WB1200TED | NGTB15N60EG
History: MIXA40WB1200TED | NGTB15N60EG



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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