MMG300D120B6HN Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG300D120B6HN
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1650 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 300 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 75 nS
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MMG300D120B6HN Datasheet (PDF)
mmg300d120b6hn.pdf

MMG300D120B6HN1200V 300A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg300d120b6tc.pdf

MMG300D120B6TC1200V 300A IGBT ModuleDecember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency sw
mmg300d120b6uc.pdf

MMG300D120B6UC1200V 300A IGBT ModuleJanuary 2020 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inve
mmg300d120b6un.pdf

MMG300D120B6UN 1200V 300A IGBT Module October 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLI
Другие IGBT... MMG200DR120UZK , MMG225WB170B6EN , MMG300WB120B6TN , MMG400D060B6N , MMG400D060UK6N , MMG300D120B6TN , MMG300D120B6UN , MMG600WB060B6EN , IRG7IC28U , MMG300WB170B6EN , MMG400K120U6TN , MMG400K120U6UN , MMG150D120B6UN , MMG300D060B6N , MMG300D170B6EN , MMG400D060B6EN , SKM200GAL123DKLD110 .
History: 2MBI150NB-120 | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | DL2G50SH6N | SKM200GB123D | TT040K120EQ | MMG200DR120B
History: 2MBI150NB-120 | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | DL2G50SH6N | SKM200GB123D | TT040K120EQ | MMG200DR120B



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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