Справочник IGBT. APT75GN120LG

 

APT75GN120LG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT75GN120LG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 833 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 99 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Coesⓘ - Выходная емкость, типовая: 275 pF
   Qgⓘ - Общий заряд затвора, typ: 425 nC
   Тип корпуса: TO264

 Аналог (замена) для APT75GN120LG

 

 

APT75GN120LG Datasheet (PDF)

 ..1. Size:82K  apt
 apt75gn120lg.pdf

APT75GN120LG APT75GN120LG

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

 4.1. Size:82K  apt
 apt75gn120b2g.pdf

APT75GN120LG APT75GN120LG

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

 4.2. Size:420K  apt
 apt75gn120j.pdf

APT75GN120LG APT75GN120LG

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 4.3. Size:331K  apt
 apt75gn120jdq3.pdf

APT75GN120LG APT75GN120LG

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

Другие IGBT... IGW100N60H3 , MMG200S060B6N , IRGPS46160D , IRGPS66160D , MMG150D120B6TN , MMG150Q120B6TN , NSGM100GB120 , APT75GN120B2G , IKW50N60H3 , IKQ120N60TA , KM435A , MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , NSGM150GB120B .

 

 
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