IKD06N60-RF Даташит. Аналоги. Параметры и характеристики.
Наименование: IKD06N60-RF
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 100 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 12 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 8 nS
Coesⓘ - Выходная емкость, типовая: 24 pF
Тип корпуса: TO252
Аналог (замена) для IKD06N60-RF
IKD06N60-RF Datasheet (PDF)
ikd06n60-rf.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD06N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica
ikd06n60ra.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD06N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6
ikd06n60r.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600
ikd06n60rf.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD06N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica
Другие IGBT... T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKW40T120 , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 .
History: FGY40T120SMD | SM2G200US120
History: FGY40T120SMD | SM2G200US120



Список транзисторов
Обновления
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