IXYP20N65B3 - параметры транзистора, его аналоги, Даташиты

IXYP20N65B3 Datasheet (PDF)

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Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

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Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65B3D1GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE = 1M

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XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

5.2. Size:195K ixys
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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

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