IXXR100N60B3H1 - аналоги, параметры транзистора

IXXR100N60B3H1 даташит

..1. Size:227K ixys
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Advance Technical Information XPTTM 600V VCES = 600V IXXR100N60B3H1 GenX3TM w/ Diode IC110 = 68A VCE(sat) 1.80V (Electrically Isolated Tab) tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous

9.1. Size:233K ixys
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VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C VGES Continuous 20 V Isolated Ta

9.2. Size:284K ixys
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Advance Technical Information XPTTM 600V VCES = 600V IXXR110N60B4H1 GenX4TM w/ Diode IC110 = 75A VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous

Другие IGBT... IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IRG4PC50W , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 , IXYA50N65C3 .