Справочник IGBT. APT40GR120B

 

APT40GR120B Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT40GR120B
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 88 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 25 nS
   Coesⓘ - Выходная емкость, типовая: 320 pF
   Тип корпуса: TO247
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APT40GR120B Datasheet (PDF)

 ..1. Size:158K  microsemi
apt40gr120b.pdfpdf_icon

APT40GR120B

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 4.1. Size:158K  microsemi
apt40gr120s.pdfpdf_icon

APT40GR120B

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 8.1. Size:170K  apt
apt40gp90j.pdfpdf_icon

APT40GR120B

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdfpdf_icon

APT40GR120B

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

Другие IGBT... APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , IRGP4086 , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG .

History: SGB15N120 | GT8J101 | IXGT28N30 | MUBW100-06A8 | IXGH12N100 | NSGM150GB120B

 

 
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