APT44GA60BD30C datasheet, аналоги, основные параметры

Наименование: APT44GA60BD30C  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 337 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 78 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 14 nS

Coesⓘ - Выходная емкость, типовая: 358 pF

Тип корпуса: TO247

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 Аналог (замена) для APT44GA60BD30C

- подбор ⓘ IGBT транзистора по параметрам

 

APT44GA60BD30C даташит

 ..1. Size:226K  microsemi
 apt44ga60bd30c.pdf pdf_icon

APT44GA60BD30C

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT APT44GA60SD30C POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAK achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of

 1.1. Size:237K  microsemi
 apt44ga60bd30 apt44ga60sd30.pdf pdf_icon

APT44GA60BD30C

APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

 4.1. Size:219K  microsemi
 apt44ga60b.pdf pdf_icon

APT44GA60BD30C

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.1. Size:219K  microsemi
 apt44ga60s.pdf pdf_icon

APT44GA60BD30C

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT25GP90BDQ1G, APT30GN60BDQ2G, APT30GP60BDQ1G, APT30GT60KRG, APT35GN120SG, APT35GP120B2DQ2G, APT40GR120B, APT40GR120S, SGT50T65FD1PN, APT44GA60SD30C, APT50GF120B2RG, APT50GF120JRDQ3, APT50GF120LRG, APT50GP60B2DQ2G, APT50GP60LDLG, APT50GT120B2RDLG, APT50GT120LRDQ2G