ISL9V3040S3S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: ISL9V3040S3S
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 430 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 21 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: TO263AB
Аналог (замена) для ISL9V3040S3S
ISL9V3040S3S Datasheet (PDF)
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf
April 2003ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBTFormerly Developmental Type 49362General DescriptionThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, andApplicationsISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition Coi
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
isl9v3040d3s isl9v3040s3s isl9v3040p3.pdf
DATA SHEETwww.onsemi.comECOSPARK) Ignition IGBTCOLLECTOR300 mJ, 400 V, N-Channel Ignition IGBTR1GATEISL9V3040D3S,R2ISL9V3040S3S,ISL9V3040P3 EMITTERGeneral DescriptionThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are thenext generation ignition IGBTs that offer outstanding SCIS capabilityin the space saving D-Pak (TO-252), as well as the industry standardD2-Pak (T
isl9v3040d3st-f085c isl9v3040s3st-f085c.pdf
ISL9V3040x3ST-F085CEcoSPARK) Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drivewww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coi
isl9v3040s f085.pdf
October 2013ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3EcoSPARK 300mJ, 400V, N-Channel Ignition IGBTFormerly Developmental Type 49362General DescriptionThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, andApplicationsISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition C
isl9v3040p3.pdf
October 2013ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3EcoSPARK 300mJ, 400V, N-Channel Ignition IGBTFormerly Developmental Type 49362General DescriptionThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, andApplicationsISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition C
isl9v3040d3stv.pdf
ISL9V3040D3STVECOSPARK) Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive This Device is Pb-Free and is RoHS Compliant AEC-Q101 Qualified and PPAP CapableApplications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug ApplicationsMAXIMU
Другие IGBT... VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , FGH40N60UFD , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2