VS-GT50TP120N
Даташит. Аналоги. Параметры и характеристики.
Наименование: VS-GT50TP120N
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 405
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
50
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.65
V @25℃
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 84
nS
Coesⓘ - Выходная емкость, типовая: 230
pF
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
VS-GT50TP120N
Datasheet (PDF)
..1. Size:88K vishay
vs-gt50tp120n.pdf 

VS-GT50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V, 50 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD
5.1. Size:1021K vishay
vs-gt50tp60n.pdf 

VS-GT50TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 50 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di
9.1. Size:181K vishay
vs-gt100tp60n.pdf 

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (
9.2. Size:163K vishay
vs-gt300fd060n.pdf 

VS-GT300FD060Nwww.vishay.comVishay SemiconductorsDIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 AFEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray internal inductances Low switching loss UL approved file E78996 Material categorization: for definitions of compliance
9.3. Size:153K vishay
vs-gt105na120ux.pdf 

VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou
9.4. Size:154K vishay
vs-gt105la120ux.pdf 

VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou
9.5. Size:155K vishay
vs-gt400th60n.pdf 

VS-GT400TH60Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 400 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD
9.6. Size:184K vishay
vs-gt100tp120n.pdf 

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using
9.7. Size:127K vishay
vs-gt400th120n.pdf 

VS-GT400TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 400 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
9.8. Size:292K vishay
vs-gt400th120u.pdf 

VS-GT400TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V, 400 AFEATURES Low VCE(on) trench IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper basepl
9.9. Size:172K vishay
vs-gt100la120ux.pdf 

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
9.10. Size:189K vishay
vs-gt300yh120n.pdf 

VS-GT300YH120Nwww.vishay.comVishay SemiconductorsDIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter TopologyFEATURES Trench IGBT technology with positivetemperature coefficient Low switching losses Maximum junction temperature 150 C 10 s short circuit capability Low inductance caseDouble INT-A-PAK HEXFRED antiparallel and series
9.11. Size:299K vishay
vs-gt140da60u.pdf 

VS-GT140DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 140 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 CSOT-227 Fully isolated package Very low internal i
9.12. Size:89K vishay
vs-gt75np120n.pdf 

VS-GT75NP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD
9.13. Size:172K vishay
vs-gt100na120ux.pdf 

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
9.14. Size:274K vishay
vs-gt175da120u.pdf 

VS-GT175DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 175 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 CSOT-227 Fully isolated package Speed 4 kHz to 30
Другие IGBT... VS-GT105NA120UX
, VS-GT140DA60U
, VS-GT175DA120U
, VS-GT300FD060N
, VS-GT300YH120N
, VS-GT400TH120N
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, VS-GT400TH60N
, IRG4PH50UD
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