DL2G50SH6N Даташит. Аналоги. Параметры и характеристики.
Наименование: DL2G50SH6N
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 240 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 30 nS
Coesⓘ - Выходная емкость, типовая: 450 pF
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
DL2G50SH6N Datasheet (PDF)
dl2g50sh6n.pdf

Discontinuance (Aug. 31, 2013) DL2G50SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and othe
dl2g50sh6a.pdf

Discontinuance (Aug. 31, 2013) DL2G50SH6A May. 2009 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors driv
dl2g50sh12a.pdf

D WTMD WTMDL2G50SH12ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power SPT+ & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverter
Другие IGBT... VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , RJH60F7BDPQ-A0 , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A .
History: APT15GN120KG | MMG200DR120B | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | MMG150DR120B | IXGT20N140C3H1 | APTGT50X170BTP3
History: APT15GN120KG | MMG200DR120B | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | MMG150DR120B | IXGT20N140C3H1 | APTGT50X170BTP3



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irf3205 equivalent | ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125