DM2G100SH6N - аналоги и описание IGBT

 

DM2G100SH6N - аналоги, основные параметры, даташиты

Наименование: DM2G100SH6N

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 480 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

tr ⓘ - Время нарастания типовое: 50 nS

Coesⓘ - Выходная емкость, типовая: 950 pF

Тип корпуса: MODULE

 Аналог (замена) для DM2G100SH6N

- подбор ⓘ IGBT транзистора по параметрам

 

DM2G100SH6N даташит

 ..1. Size:301K  dawin
dm2g100sh6n.pdfpdf_icon

DM2G100SH6N

DM2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign

 4.1. Size:326K  dawin
dm2g100sh6a.pdfpdf_icon

DM2G100SH6N

DM2G100SH6A July. 2010 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar

 5.1. Size:196K  dawin
dm2g100sh12a.pdfpdf_icon

DM2G100SH6N

Preliminary DM2G100SH12A Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh

 9.1. Size:66K  dawin
dm2g150sh12a.pdfpdf_icon

DM2G100SH6N

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

Другие IGBT... DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , GT30F124 , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A .

History: DM2G150SH6A | F3L150R12W2H3-B11

 

 

 

 

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