Справочник IGBT. VS-GB100TH120N

 

VS-GB100TH120N - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: VS-GB100TH120N
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 833 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 61 nS
   Coesⓘ - Выходная емкость, типовая: 600 pF
   Тип корпуса: MODULE

 Аналог (замена) для VS-GB100TH120N

 

 

VS-GB100TH120N Datasheet (PDF)

 ..1. Size:153K  vishay
vs-gb100th120n.pdf

VS-GB100TH120N
VS-GB100TH120N

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base

 1.1. Size:158K  vishay
vs-gb100th120u.pdf

VS-GB100TH120N
VS-GB100TH120N

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P

 5.1. Size:88K  vishay
vs-gb100tp120u.pdf

VS-GB100TH120N
VS-GB100TH120N

VS-GB100TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop

 5.2. Size:193K  vishay
vs-gb100ts60npbf.pdf

VS-GB100TH120N
VS-GB100TH120N

VS-GB100TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

 5.3. Size:88K  vishay
vs-gb100tp120n.pdf

VS-GB100TH120N
VS-GB100TH120N

VS-GB100TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Is

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