VS-GB100TH120N - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GB100TH120N
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 833 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 61 nS
Coesⓘ - Выходная емкость, типовая: 600 pF
Тип корпуса: MODULE
Аналог (замена) для VS-GB100TH120N
VS-GB100TH120N Datasheet (PDF)
vs-gb100th120n.pdf
VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base
vs-gb100th120u.pdf
VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P
vs-gb100tp120u.pdf
VS-GB100TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop
vs-gb100ts60npbf.pdf
VS-GB100TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras
vs-gb100tp120n.pdf
VS-GB100TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Is
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
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