VS-GB150TH120U Даташит. Аналоги. Параметры и характеристики.
Наименование: VS-GB150TH120U
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1147 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.1 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 116 nS
Coesⓘ - Выходная емкость, типовая: 1140 pF
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
VS-GB150TH120U Datasheet (PDF)
vs-gb150th120u.pdf

VS-GB150TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 150 AFEATURES 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB
vs-gb150th120n.pdf

VS-GB150TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 150 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-PAK Is
vs-gb150ts60npbf.pdf

VS-GB150TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 138 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras
vs-gb150lh120n.pdf

VS-GB150LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 150 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
Другие IGBT... VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , GT30J127 , VS-GB150TS60NPBF , VS-GB200LH120N , VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF .
History: MMG25H120XB6TN | 2MBI200TA-060 | 2MBI100SC-120 | IXGH24N170AH1 | SKM195GB124DN | VS-GP100TS60SFPBF | STGE50NC60WD
History: MMG25H120XB6TN | 2MBI200TA-060 | 2MBI100SC-120 | IXGH24N170AH1 | SKM195GB124DN | VS-GP100TS60SFPBF | STGE50NC60WD



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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