VS-GA200TH60S Даташит. Аналоги. Параметры и характеристики.
Наименование: VS-GA200TH60S
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 1042 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 45 nS
Coesⓘ - Выходная емкость, типовая: 710 pF
Тип корпуса: MODULE
Аналог (замена) для VS-GA200TH60S
VS-GA200TH60S Datasheet (PDF)
vs-ga200th60s.pdf

VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle
vs-ga200hs60s1pbf.pdf

VS-GA200HS60S1PbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge IGBT(Standard Speed IGBT), 200 AFEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compl
vs-ga200sa60up.pdf

VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi
vs-ga250sa60s.pdf

VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i
Другие IGBT... VS-GB200LH120N , VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , IHW20N135R5 , VS-GA250SA60S , VS-GB300AH120N , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U .
History: SM2G150US60 | MMG600WB120B6E4N | 2SH31 | VS-GT105LA120UX
History: SM2G150US60 | MMG600WB120B6E4N | 2SH31 | VS-GT105LA120UX



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