Справочник IGBT. HGTP7N60A4

 

HGTP7N60A4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTP7N60A4

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Максимальная температура перехода (Tj): 150

Корпус: TO220AB

Аналог (замена) для HGTP7N60A4

 

 

HGTP7N60A4 Datasheet (PDF)

1.1. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

 HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 • >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining • 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These • 600V Switching SOA Capability devices have t

2.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated • 14A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

2.2. hgt1s7n60c3ds hgtp7n60c3d.pdf Size:557K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha

 2.3. hgtp7n60b3d hgt1s7n60b3d.pdf Size:497K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diode • 14A, 600V, TC = 25oC The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated • 600V Switching SOA Capability high voltage switching devices combining the best features • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC of MOSFETs an

2.4. hgtp7n60.pdf Size:260K _harris_semi

HGTP7N60A4
HGTP7N60A4

HGTP7N60C3D, HGT1S7N60C3D, S E M I C O N D U C T O R HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC EMITTER COLLECTOR • 600V Switching SOA Capability GATE • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating COLLECTOR (FLANGE) • Low Conduction Loss

Другие IGBT... HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , G30N60C3D , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S .

 

 
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