Справочник IGBT. HGTP7N60A4

 

HGTP7N60A4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTP7N60A4

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальная температура перехода (Tj): 150

Корпус: TO220AB

Аналог (замена) для HGTP7N60A4

 

 

HGTP7N60A4 Datasheet (PDF)

1.1. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high i

2.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC h

2.2. hgt1s7n60c3ds hgtp7n60c3d.pdf Size:557K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have

 2.3. hgtp7n60b3d hgt1s7n60b3d.pdf Size:497K _fairchild_semi

HGTP7N60A4
HGTP7N60A4

HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oC The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC of MOSFETs and bipolar

2.4. hgtp7n60.pdf Size:260K _harris_semi

HGTP7N60A4
HGTP7N60A4

HGTP7N60C3D, HGT1S7N60C3D, S E M I C O N D U C T O R HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC EMITTER COLLECTOR 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating COLLECTOR (FLANGE) Low Conduction Loss Hyperfast A

Другие IGBT... HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , G30N60C3D , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S .

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Список транзисторов

Обновления

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |