HGTP7N60B3D, HGT1S7N60B3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oCThe HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oCof MOSFETs an

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

HGTP7N60C3D, HGT1S7N60C3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 14A, 600V at TC = 25oCThe HGTP7N60C3D and HGT1S7N60C3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCof MOSFETs

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

September 2005HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodesGeneral Description FeaturesThe HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oCHGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

HGTP7N60C3D, HGT1S7N60C3D,S E M I C O N D U C T O RHGT1S7N60C3DS14A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 14A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit RatingCOLLECTOR (FLANGE) Low Conduction Loss