Справочник IGBT. SIGC04T65E

 

SIGC04T65E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SIGC04T65E
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 6 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.87 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Тип корпуса: CHIP

 Аналог (замена) для SIGC04T65E

 

 

SIGC04T65E Datasheet (PDF)

 ..1. Size:116K  infineon
sigc04t65e.pdf

SIGC04T65E
SIGC04T65E

SIGC04T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC04T65E 650

 6.1. Size:56K  infineon
sigc04t60.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

 6.2. Size:76K  infineon
sigc04t60g.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pac

 6.3. Size:58K  infineon
sigc04t60ge.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packa

 6.4. Size:72K  infineon
sigc04t60gs.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pa

 6.5. Size:56K  infineon
sigc04t60e.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

 6.6. Size:118K  infineon
sigc04t60gse.pdf

SIGC04T65E
SIGC04T65E

SIGC04T60GSE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size Package

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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