Справочник IGBT. SIGC04T65E

 

SIGC04T65E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: SIGC04T65E

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.87

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 6

Максимальная температура перехода (Tj): 150

Корпус: CHIP

Аналог (замена) для SIGC04T65E

SIGC04T65E Datasheet (PDF)

1.1. sigc04t65e.pdf Size:116K _igbt

SIGC04T65E
SIGC04T65E

 SIGC04T65E IGBT3 Chip Features: Recommended for: • 650V Trench & Field Stop technology • power modules • low VCE(sat) C • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient • easy paralleling G E • Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC04T65E 650

2.1. sigc04t60gse.pdf Size:118K _igbt

SIGC04T65E
SIGC04T65E

 SIGC04T60GSE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package

2.2. sigc04t60ge.pdf Size:58K _igbt

SIGC04T65E
SIGC04T65E

 SIGC04T60GE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packa

2.3. sigc04t60.pdf Size:56K _igbt

SIGC04T65E
SIGC04T65E

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

2.4. sigc04t60e.pdf Size:56K _igbt

SIGC04T65E
SIGC04T65E

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

2.5. sigc04t60gs.pdf Size:72K _igbt

SIGC04T65E
SIGC04T65E

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pa

2.6. sigc04t60g.pdf Size:76K _igbt

SIGC04T65E
SIGC04T65E

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pac

Другие IGBT... SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS , SIGC04T60GSE , STGB10NB37LZ , SIGC05T60SNC , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB .

 


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Список транзисторов

Обновления

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |