SIGC05T60SNC datasheet, аналоги, основные параметры
Наименование: SIGC05T60SNC 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 4 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
tr ⓘ - Время нарастания типовое: 16 nS
Coesⓘ - Выходная емкость, типовая: 29 pF
Тип корпуса: CHIP
📄📄 Копировать
Аналог (замена) для SIGC05T60SNC
- подбор ⓘ IGBT транзистора по параметрам
SIGC05T60SNC даташит
..1. Size:75K infineon
sigc05t60snc.pdf 
SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip DuoPack SGP04N60 short circuit prove positive temperature coefficient G Applications E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4149- SIGC05T60SNC 600V 4A 2.29 x 2.29 mm2 sawn on foil A101
9.1. Size:56K infineon
sigc04t60.pdf 
SIGC04T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
9.2. Size:76K infineon
sigc04t60g.pdf 
SIGC04T60G IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pac
9.3. Size:64K infineon
sigc06t120cs.pdf 
SIGC06T120CS IGBT Chip in NPT-technology C FEATURES This chip is used for 1200V NPT technology 180 m chip SGP02N120 short circuit prove positive temperature coefficient Applications G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4115- SIGC06T120CS 1200V 2A 2.45 x 2.25
9.4. Size:75K infineon
sigc03t60snc.pdf 
SIGC03T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules short circuit prove positive temperature coefficient G Applications E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000- SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME
9.5. Size:116K infineon
sigc08t65e.pdf 
SIGC08T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC08T65E 650
9.6. Size:117K infineon
sigc03t60se.pdf 
SIGC03T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package S
9.7. Size:75K infineon
sigc06t60.pdf 
SIGC06T60 IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack
9.8. Size:105K infineon
sigc06t60ge.pdf 
SIGC06T60GE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package S
9.9. Size:64K infineon
sigc07t60un.pdf 
SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES This chip is used for low Eoff SKB06N60HS 600V NPT technology 100 m chip G Applications short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220- SIGC07T60UN 60
9.10. Size:116K infineon
sigc08t60se.pdf 
SIGC08T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package S
9.11. Size:117K infineon
sigc06t65e.pdf 
SIGC06T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC06T65E 650
9.12. Size:75K infineon
sigc07t60snc.pdf 
SIGC07T60SNC IGBT Chip in NPT-technology C FEATURES 600V NPT technology This chip is used for 100 m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient G Applications E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672- SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6
9.13. Size:74K infineon
sigc08t60.pdf 
SIGC08T60 IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack
9.14. Size:58K infineon
sigc04t60ge.pdf 
SIGC04T60GE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packa
9.15. Size:72K infineon
sigc04t60gs.pdf 
SIGC04T60GS IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pa
9.16. Size:116K infineon
sigc06t60e.pdf 
SIGC06T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package SI
9.17. Size:57K infineon
sigc03t60e.pdf 
SIGC03T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
9.18. Size:116K infineon
sigc08t60s.pdf 
SIGC08T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package S
9.19. Size:56K infineon
sigc04t60e.pdf 
SIGC04T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
9.20. Size:116K infineon
sigc08t60e.pdf 
SIGC08T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package SI
9.21. Size:116K infineon
sigc04t65e.pdf 
SIGC04T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC04T65E 650
9.22. Size:105K infineon
sigc06t60g.pdf 
SIGC06T60GE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package S
9.23. Size:118K infineon
sigc04t60gse.pdf 
SIGC04T60GSE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applications Chip Type VCE IC Die Size Package
9.24. Size:64K infineon
sigc07t60nc.pdf 
SIGC07T60NC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT-Modules positive temperature coefficient easy paralleling G Applications E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134- SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2 Ra
Другие IGBT... SIGC03T60SNC, SIGC04T60, SIGC04T60E, SIGC04T60G, SIGC04T60GE, SIGC04T60GS, SIGC04T60GSE, SIGC04T65E, IRG4PC50UD, IGC70T120T6RL, IRGC100B120KB, IRGC100B120UB, IRGC100B60KB, IRGC100B60UB, IRGC15B120KB, IRGC15B120UB, IRGC16B120KB
