SIGC05T60SNC - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SIGC05T60SNC
Тип транзистора: IGBT
Тип управляющего канала: N
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 4
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 16
Емкость коллектора типовая (Cc), pf: 29
Тип корпуса: CHIP
Аналог (замена) для SIGC05T60SNC
SIGC05T60SNC Datasheet (PDF)
sigc05t60snc.pdf
SIGC05T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip DuoPack SGP04N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4149-SIGC05T60SNC 600V 4A 2.29 x 2.29 mm2 sawn on foil A101
sigc04t60.pdf
SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
sigc04t60g.pdf
SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pac
sigc06t120cs.pdf
SIGC06T120CS IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip SGP02N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4115-SIGC06T120CS 1200V 2A 2.45 x 2.25
sigc03t60snc.pdf
SIGC03T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000-SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME
sigc08t65e.pdf
SIGC08T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC08T65E 650
sigc03t60se.pdf
SIGC03T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc06t60.pdf
SIGC06T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack
sigc06t60ge.pdf
SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc07t60un.pdf
SIGC07T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SKB06N60HS 600V NPT technology 100m chip GApplications: short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220-SIGC07T60UN 60
sigc08t60se.pdf
SIGC08T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc06t65e.pdf
SIGC06T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC06T65E 650
sigc07t60snc.pdf
SIGC07T60SNC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672-SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6
sigc08t60.pdf
SIGC08T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack
sigc04t60ge.pdf
SIGC04T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packa
sigc04t60gs.pdf
SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pa
sigc06t60e.pdf
SIGC06T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageSI
sigc03t60e.pdf
SIGC03T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
sigc08t60s.pdf
SIGC08T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc04t60e.pdf
SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
sigc08t60e.pdf
SIGC08T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageSI
sigc04t65e.pdf
SIGC04T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC04T65E 650
sigc06t60g.pdf
SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc04t60gse.pdf
SIGC04T60GSE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size Package
sigc07t60nc.pdf
SIGC07T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules positive temperature coefficient easy paralleling GApplications: E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134-SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra
Другие IGBT... SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS , SIGC04T60GSE , SIGC04T65E , SGP30N60 , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ