IRGC100B120UB datasheet, аналоги, основные параметры
Наименование: IRGC100B120UB 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.1 V @25℃
Тип корпуса: CHIP
📄📄 Копировать
Аналог (замена) для IRGC100B120UB
- подбор ⓘ IGBT транзистора по параметрам
IRGC100B120UB даташит
irgc100b120ub.pdf
PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability IC(nom) @ 25 C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E Benchmark Efficiency above 20KHz 150mm Wafer
irgc100b120u.pdf
PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Effic
irgc100b120k.pdf
PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark E
Другие IGBT... SIGC04T60G, SIGC04T60GE, SIGC04T60GS, SIGC04T60GSE, SIGC04T65E, SIGC05T60SNC, IGC70T120T6RL, IRGC100B120KB, IRG4PC50W, IRGC100B60KB, IRGC100B60UB, IRGC15B120KB, IRGC15B120UB, IRGC16B120KB, IRGC16B60KB, GT50JR22, RJP30H2A
🌐 : EN ES РУ
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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