Справочник IGBT. IRGC100B60KB

 

IRGC100B60KB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRGC100B60KB
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Тип корпуса: CHIP

 Аналог (замена) для IRGC100B60KB

 

 

IRGC100B60KB Datasheet (PDF)

 ..1. Size:79K  international rectifier
 irgc100b60kb.pdf

IRGC100B60KB

PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

 4.1. Size:34K  international rectifier
 irgc100b60ub.pdf

IRGC100B60KB

PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf

 6.1. Size:15K  international rectifier
 irgc100b120k.pdf

IRGC100B60KB

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

 6.2. Size:43K  international rectifier
 irgc100b120kb.pdf

IRGC100B60KB

 6.3. Size:94K  international rectifier
 irgc100b120ub.pdf

IRGC100B60KB IRGC100B60KB

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer

 6.4. Size:15K  international rectifier
 irgc100b120u.pdf

IRGC100B60KB

PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic

Другие IGBT... SIGC04T60GE , SIGC04T60GS , SIGC04T60GSE , SIGC04T65E , SIGC05T60SNC , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRG4PC50UD , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IRGC16B60KB , GT50JR22 , RJP30H2A , FGA60N65SMD .

 

 
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