Справочник IGBT. FGH30S130P


FGH30S130P - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: FGH30S130P

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 500

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1300

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 25

Максимальный постоянный ток коллектора |Ic| @25℃, A: 60

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.3

Максимальная температура перехода (Tj), ℃: 175

Время нарастания типовое (tr), nS: 360

Емкость коллектора типовая (Cc), pf: 75

Тип корпуса: TO-247

Аналог (замена) для FGH30S130P



FGH30S130P Datasheet (PDF)

 ..1. Size:667K  fairchild semi

FGH30S130P FGH30S130P

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona

 ..2. Size:538K  onsemi

FGH30S130P FGH30S130P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:422K  onsemi

FGH30S130P FGH30S130P

IGBT - Shorted-anode1500 V, 30 AFGH30S150PDescriptionUsing advanced field stop trench and shorted-anode technology,ON Semiconductors shorted-anode trench IGBTs offer superiorwww.onsemi.comconduction and switching performances for soft switchingapplications. The device can operate in parallel configuration withCexceptional avalanche capability. This device is designed for

 9.1. Size:582K  fairchild semi

FGH30S130P FGH30S130P

November 2008FGH30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Arug

 9.2. Size:717K  fairchild semi

FGH30S130P FGH30S130P

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra

 9.3. Size:388K  onsemi

FGH30S130P FGH30S130P

IGBT - PT600 V, 30 AFGH30N60LSDDescriptionUsing ON Semiconductor s advanced PT technology,the FGA30N60LSD IGBT offers superior conduction performances,www.onsemi.comwhich offer the optimum performance for medium switchingapplication such as solar inverter, UPS applications where lowCconduction losses are the most important factor.Features Low Saturation Voltage: VC

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