Справочник IGBT. IRG4BC20K

 

IRG4BC20K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG4BC20K
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 16 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.27 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 27 nS
   Coesⓘ - Выходная емкость, типовая: 61 pF
   Qgⓘ - Общий заряд затвора, typ: 34 nC
   Тип корпуса: TO220AB

 Аналог (замена) для IRG4BC20K

 

 

IRG4BC20K Datasheet (PDF)

 ..1. Size:141K  international rectifier
 irg4bc20k.pdf

IRG4BC20K IRG4BC20K

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design

 0.1. Size:222K  international rectifier
 irg4bc20kd-s.pdf

IRG4BC20K IRG4BC20K

PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)

 0.2. Size:165K  international rectifier
 irg4bc20k-s.pdf

IRG4BC20K IRG4BC20K

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VCES = 600V VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation desig

 0.3. Size:202K  international rectifier
 irg4bc20kd.pdf

IRG4BC20K IRG4BC20K

PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on

 0.4. Size:315K  infineon
 irg4bc20kdpbf.pdf

IRG4BC20K IRG4BC20K

IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =

Другие IGBT... HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , MBQ50T65FESC , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD .

 

 
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