IRG4BC20UD - параметры транзистора, его аналоги, Даташиты

IRG4BC20UD Datasheet (PDF)

..1. Size:238K international rectifier
irg4bc20ud.pdf pdf_icon

PD-91449CIRG4BC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution and higher efficiency than Generation 3

0.1. Size:371K international rectifier
irg4bc20udpbf.pdf pdf_icon

PD - 94909AIRG4BC20UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBTSOFT RECOVERY DIODEFeaturesC UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85V parameter distribution and higher efficiency thanG Generati

0.2. Size:240K international rectifier
irg4bc20ud-s.pdf pdf_icon

PD- 94077IRG4BC20UD-S UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution

5.1. Size:173K international rectifier
irg4bc20u.pdf pdf_icon

D DI I TI T D T I T I T FeaturesFeaturesFeaturesFeaturesFeaturesC UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85VG parameter distribution and higher efficiency than Generatio

Другие IGBT... IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRGB20B60PD1 , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S .