IRG4BC20W - аналоги и описание IGBT

PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) VCES = 600V applications Industry-benchmark switching losses improve VCE(on) typ. = 2.16V efficiency of all power supply topologies G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 6.5A E

PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, I

PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G Very Tig

PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features Fast Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.66V G Generation 3

PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBT SOFT RECOVERY DIODE Features C UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V parameter distribution and higher efficiency than G Generati

D D I I T I T D T I T I T Features Features Features Features Features C UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V G parameter distribution and higher efficiency than Generatio

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation design

PD -94116 IRG4BC20MD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS=15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85V G Industry

IRG4BC20FDPbF Fast CoPack IGBT Features C = G

PD -91598A IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on)

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125 C, VCES = 600V VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation desig

PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution and higher efficiency than Generation 3

IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C GE =

D I I T I T D T I T I T Features C Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on

PD -94115 IRG4BC20MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS=15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85V G Industry s

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VG

PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G Very T