6MBP100VDA060-50 Даташит. Аналоги. Параметры и характеристики.
Наименование: 6MBP100VDA060-50
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 265 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Тип корпуса: MODULE
Аналог (замена) для 6MBP100VDA060-50
6MBP100VDA060-50 Datasheet (PDF)
6mbp100vda060-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP100VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr
6mbp100vda120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP100VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec
Другие IGBT... 6MBI550V-120-50 , 6MBI75U2A-060 , 6MBI75VA-060-50 , 6MBI75VA-120-50 , 6MBI75VW-060-50 , 6MBI75VW-120-50 , 6MBP100NA060-01 , 6MBP100RA060 , GT30G124 , 6MBP100VDA120-50 , 6MBP10VAA120-50 , 6MBP150RA-060 , 6MBP150VDA060-50 , 6MBP150VEA120-50 , 6MBP15VAA120-50 , 6MBP200RA060 , 6MBP200VDA060-50 .
History: DF200R12W1H3_B27 | STGD10NC60H
History: DF200R12W1H3_B27 | STGD10NC60H
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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