Справочник IGBT. 7MBP75TEA060

 

7MBP75TEA060 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: 7MBP75TEA060
   Тип транзистора: IGBT + Diode + Built-in Zener Diodes
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 1.7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Тип корпуса: MODULE

 Аналог (замена) для 7MBP75TEA060

 

 

7MBP75TEA060 Datasheet (PDF)

 ..1. Size:355K  fuji
 7mbp75tea060.pdf

7MBP75TEA060 7MBP75TEA060

7MBP75TEA060600V / 75A 7 in one-packageEcono IPM seriesFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts inbuilt-in control circuitMaximum rating

 8.1. Size:443K  fuji
 7mbp75vda120-50.pdf

7MBP75TEA060 7MBP75TEA060

http://www.fujielectric.com/products/semiconductor/7MBP75VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 8.2. Size:430K  fuji
 7mbp75vda060-50.pdf

7MBP75TEA060 7MBP75TEA060

http://www.fujielectric.com/products/semiconductor/7MBP75VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

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