7MBP75VDA060-50 datasheet, аналоги, основные параметры

Наименование: 7MBP75VDA060-50  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

Тип корпуса: MODULE

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 Аналог (замена) для 7MBP75VDA060-50

- подбор ⓘ IGBT транзистора по параметрам

 

7MBP75VDA060-50 даташит

 0.1. Size:430K  fuji
 7mbp75vda060-50.pdf pdf_icon

7MBP75VDA060-50

http //www.fujielectric.com/products/semiconductor/ 7MBP75VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

 5.1. Size:443K  fuji
 7mbp75vda120-50.pdf pdf_icon

7MBP75VDA060-50

http //www.fujielectric.com/products/semiconductor/ 7MBP75VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 8.1. Size:355K  fuji
 7mbp75tea060.pdf pdf_icon

7MBP75VDA060-50

7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum rating

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