IRG4IBC30FD Даташит. Аналоги. Параметры и характеристики.
Наименование: IRG4IBC30FD
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 45 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 20.3 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.59 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 26 nS
Coesⓘ - Выходная емкость, типовая: 74 pF
Тип корпуса: TO220F
- подбор IGBT транзистора по параметрам
IRG4IBC30FD Datasheet (PDF)
irg4ibc30fd.pdf

PD- 91751AIRG4IBC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.59V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.59V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30kd.pdf

PD -91690AIRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.21V para
irg4ibc30w.pdf

PD 91791AIRG4IBC30WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.1VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12
irg4ibc30s.pdf

PD - 94293IRG4IBC30SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating freqencies (
Другие IGBT... IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , FGW75N60HD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD .
History: MMIX1X340N65B4 | IXSN35N120AU1 | 2MBI200VA-060-50 | SII150N12 | IRG4BC30F | RJH1CV5DPQ-E0 | OM6526SA
History: MMIX1X340N65B4 | IXSN35N120AU1 | 2MBI200VA-060-50 | SII150N12 | IRG4BC30F | RJH1CV5DPQ-E0 | OM6526SA



Список транзисторов
Обновления
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