BSM15GP60 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: BSM15GP60
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 100 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 50 nS
Тип корпуса: MODULE
BSM15GP60 Datasheet (PDF)
bsm15gp60.pdf
Technische Information / Technical InformationIGBT-ModuleBSM15GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergle
bsm15gp120.pdf
Technische Information / Technical InformationIGBT-ModuleBSM15GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg
bsm15gd120dn2.pdf
BSM 15 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm150gb60dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom
bsm150gb120dlc.pdf
Technische Information / technical informationIGBT-ModuleBSM150GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm150gal120dlc.pdf
Technische Information / technical informationIGBT-ModuleBSM150GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit
bsm150gb170dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 300 APeriodischer Kollektor Spitzen
bsm150gb60dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom
bsm150gd60dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 150 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 55C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom
bsm150gal120dn2.pdf
BSM 150 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
bsm150gar120dn2.pdf
BSM 150 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
bsm150gb170dn2.pdf
BSM 150 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 OhmType VCE IC Package Ordering CodeBSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700
bsm150gb120dn2.pdf
BSM 150 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2