Справочник IGBT. IRG4IBC30KD

 

IRG4IBC30KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG4IBC30KD
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 17 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.21 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 42 nS
   Coesⓘ - Выходная емкость, типовая: 110 pF
   Тип корпуса: TO220F

 Аналог (замена) для IRG4IBC30KD

 

 

IRG4IBC30KD Datasheet (PDF)

 ..1. Size:198K  international rectifier
 irg4ibc30kd.pdf

IRG4IBC30KD IRG4IBC30KD

PD -91690AIRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.21V para

 5.1. Size:223K  international rectifier
 irg4ibc30fd.pdf

IRG4IBC30KD IRG4IBC30KD

PD- 91751AIRG4IBC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.59V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.59V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi

 5.2. Size:163K  international rectifier
 irg4ibc30w.pdf

IRG4IBC30KD IRG4IBC30KD

PD 91791AIRG4IBC30WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.1VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12

 5.3. Size:129K  international rectifier
 irg4ibc30s.pdf

IRG4IBC30KD IRG4IBC30KD

PD - 94293IRG4IBC30SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating freqencies (

 5.4. Size:231K  international rectifier
 irg4ibc30ud.pdf

IRG4IBC30KD IRG4IBC30KD

PD91753AIRG4IBC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200G kHz in resonant m

Другие IGBT... IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4PC40UD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S .

 

 
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