BSM200GB120DLC - аналоги, параметры транзистора

Технические параметры BSM200GB120DLC

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Technische Information / technical information IGBT-Module BSM200GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

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Technische Information / Technical Information IGBT-Module BSM200GB120DLC IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 420

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bsm200gb120dn2.pdf pdf_icon

BSM 200 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

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bsm200gb170dlc.pdf pdf_icon

Technische Information / Technical Information IGBT-Module BSM 200 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Tvj = 25 C VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollek