IRG4PC40FD
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG4PC40FD
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 160
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
49
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.5
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 32
nS
Coesⓘ - Выходная емкость, типовая: 140
pF
Qgⓘ - Общий заряд затвора, typ: 100
nC
Тип корпуса:
TO247AC
Аналог (замена) для IRG4PC40FD
IRG4PC40FD
Datasheet (PDF)
..1. Size:224K international rectifier
irg4pc40fd.pdf 
PD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighterG parameter distribution and high
0.1. Size:342K infineon
irg4pc40fdpbf.pdf 
PD - 94911AIRG4PC40FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50V parameter distribution and higher efficiency thanG Generation 3
5.1. Size:150K international rectifier
irg4pc40f.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VGE
6.1. Size:408K international rectifier
auirg4pc40s-e.pdf 
AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (
6.2. Size:125K international rectifier
irg4pc40k.pdf 
D . IRG4PC40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Ge
6.3. Size:148K international rectifier
irg4pc40s.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
6.4. Size:188K international rectifier
irg4pc40kd.pdf 
PD -91584AIRG4PC40KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design pro
6.5. Size:153K international rectifier
irg4pc40u.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation 3
6.6. Size:119K international rectifier
irg4pc40w.pdf 
PD -91656CIRG4PC40WINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 20AE Low IGBT conduction losses
6.7. Size:238K international rectifier
irg4pc40ud.pdf 
PD 9.1467DIRG4PC40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.72V Generation 4 IGBT design provides tighterG parameter distribution a
6.8. Size:398K infineon
auirg4pc40s-e.pdf 
AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (
Другие IGBT... IRG4PC30FD
, IRG4PC30K
, IRG4PC30KD
, IRG4PC30S
, IRG4PC30U
, IRG4PC30UD
, IRG4PC30W
, IRG4PC40F
, FGPF4536
, IRG4PC40K
, IRG4PC40KD
, IRG4PC40S
, IRG4PC40U
, IRG4PC40UD
, IRG4PC40W
, IRG4PC50F
, IRG4PC50FD
.
