Справочник IGBT. IRG4PC40S

 

IRG4PC40S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PC40S

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 160W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимально допустимое напряжение эмиттер-затвор (Ueg): 10V

Максимальный постоянный ток коллектора (Ic): 31A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PC40S

 

 

IRG4PC40S Datasheet (PDF)

1.1. irg4pc40s.pdf Size:143K _international_rectifier

IRG4PC40S
IRG4PC40S

D I I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 Industry standard TO-2

1.2. irg4pc40s.pdf Size:148K _igbt_a

IRG4PC40S
IRG4PC40S

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stan

 1.3. auirg4pc40s-e.pdf Size:408K _igbt_a

IRG4PC40S
IRG4PC40S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G  Standard: Optimized for minimum saturation voltage E and low operating frequencies ( < 1kHz) @ VGE = 15V, IC = 31A n-channel  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry

Другие IGBT... IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W , IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , FGH40N60SFD , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S .

 

 
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