Справочник IGBT. IRG4PC50K

 

IRG4PC50K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PC50K

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальный постоянный ток коллектора (Ic): 30A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PC50K

 

 

IRG4PC50K Datasheet (PDF)

1.1. irg4pc50kd.pdf Size:374K _international_rectifier

IRG4PC50K
IRG4PC50K

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher effic

1.2. irg4pc50k.pdf Size:115K _international_rectifier

IRG4PC50K
IRG4PC50K

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides t

 1.3. irg4pc50kd.pdf Size:31K _igbt_a

IRG4PC50K
IRG4PC50K

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

1.4. irg4pc50k.pdf Size:121K _igbt_a

IRG4PC50K
IRG4PC50K

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

Другие IGBT... IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRGP4063D , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K .

 

 
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