Справочник IGBT. DIM1000NSM33-TL

 

DIM1000NSM33-TL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: DIM1000NSM33-TL
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 10400
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 3300
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 1000
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.7
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 430
   Общий заряд затвора (Qg), typ, nC: 17000
   Тип корпуса: MODULE

 Аналог (замена) для DIM1000NSM33-TL

 

 

DIM1000NSM33-TL Datasheet (PDF)

 0.1. Size:492K  dynex
 dim1000nsm33-ts.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 0.2. Size:492K  dynex
 dim1000nsm33-tl.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

 7.1. Size:532K  dynex
 dim1000ecm33-tl.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 7.2. Size:532K  dynex
 dim1000ecm33-ts.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.3. Size:484K  dynex
 dim1000xsm33-tl001.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 7.4. Size:485K  dynex
 dim1000xsm33-ts001.pdf

DIM1000NSM33-TL DIM1000NSM33-TL

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

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