Справочник IGBT. DIM1000NSM33-TS

 

DIM1000NSM33-TS - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: DIM1000NSM33-TS
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 10400 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 3300 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 1000 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 360 nS
   Qgⓘ - Общий заряд затвора, typ: 17000 nC
   Тип корпуса: MODULE

 Аналог (замена) для DIM1000NSM33-TS

 

 

DIM1000NSM33-TS Datasheet (PDF)

 0.1. Size:492K  dynex
 dim1000nsm33-ts.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 0.2. Size:492K  dynex
 dim1000nsm33-tl.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

 7.1. Size:532K  dynex
 dim1000ecm33-tl.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 7.2. Size:532K  dynex
 dim1000ecm33-ts.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.3. Size:484K  dynex
 dim1000xsm33-tl001.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 7.4. Size:485K  dynex
 dim1000xsm33-ts001.pdf

DIM1000NSM33-TS DIM1000NSM33-TS

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

Другие IGBT... DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , MBQ50T65FDSC , DIM1000XSM33-TL001 , DIM1000XSM33-TS001 , DIM100PHM33-F , DIM1200ASM45-TS , DIM1200ASM45-TS001 , DIM1200ESM33-F , DIM1200FSM12-A , DIM1200FSM17-A .

 

 
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