DIM1000XSM33-TL001 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: DIM1000XSM33-TL001
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 10400 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 3300 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 1000 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 430 nS
Тип корпуса: MODULE
Аналог (замена) для DIM1000XSM33-TL001
DIM1000XSM33-TL001 Datasheet (PDF)
dim1000xsm33-tl001.pdf
DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I
dim1000xsm33-ts001.pdf
DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With
dim1000nsm33-ts.pdf
DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary
dim1000ecm33-tl.pdf
DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS
dim1000nsm33-tl.pdf
DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with
dim1000ecm33-ts.pdf
DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal
Другие IGBT... DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS , FGA60N65SMD , DIM1000XSM33-TS001 , DIM100PHM33-F , DIM1200ASM45-TS , DIM1200ASM45-TS001 , DIM1200ESM33-F , DIM1200FSM12-A , DIM1200FSM17-A , DIM1200FSS12-A .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2