DIM400NSM33-F datasheet, подбор замены IGBT

 ..1. Size:432K  dynex
 dim400nsm33-f.pdf 

DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 (LN28811) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 8.1. Size:632K  dynex
 dim400xcm45-ts.pdf 

Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-1 DS6111-2 January 2014 (LN31266) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 400A High Current Density Enhanced DMOS SPT IC(PK) (max) 800A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary te

 8.2. Size:561K  dynex
 dim400gdm33-f.pdf 

DIM400GDM33-F000 Dual Switch IGBT Module Replaces DS5616-2.1 DS5616-3 February 2014 (LN31315) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 8.3. Size:430K  dynex
 dim400gcm33-f.pdf 

DIM400GCM33-F000 IGBT Chopper Module Replaces DS5863-1.1 DS5863-2 February 2011 (LN28080) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals Lea

 8.4. Size:551K  dynex
 dim400phm17-a.pdf 

DIM400PHM17-A000 IGBT Half Bridge Module Replaces DS5561-1.3 DS5561.2 January 2014 (LN31262) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary

 8.5. Size:426K  dynex
 dim400xcm33-f.pdf 

DIM400XCM33-F000 IGBT Chopper Module Replaces DS5938-1.0 DS5938-2 May 2011 (LN28404) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead Fre

 8.6. Size:632K  dynex
 dim400xcm45-ts001.pdf 

Data DIM400XCM45-TS001 IGBT Chopper Module Replaces DS6110-1 DS6110-2 January 2014 (LN31265) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10 s Short Circuit Withstand IC (max) 400A High Thermal Cycling Capability IC(PK) (max) 800A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

 8.7. Size:405K  dynex
 dim400dcm17-a.pdf 

DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.5 28 FEATURES 6 x O7 0.2 16 VCES 1700V 10 s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth 0.2 40 IC (max) 400A High Thermal Cycling Capability max 8 IC(PK) (max) 800A 0.2 53 Non Punch Through Silicon * Measured at the power

 8.8. Size:338K  dynex
 dim400ddm12-a.pdf 

DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (max) 800A

 8.9. Size:335K  dynex
 dim400dds12-a.pdf 

DIM400DDS12-A000 Dual Switch IGBT Module Replaces DS5841-1.1 DS5841-2 November 2009 (LN26744) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (max) 800A

 8.10. Size:392K  dynex
 dim400ddm17-a.pdf 

DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.2 53 57 I

 8.11. Size:421K  dynex
 dim400pbm17-a.pdf 

DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 (LN27710) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th