IRG4PH20KD datasheet, подбор замены IGBT

 ..1. Size:193K  international rectifier
 irg4ph20kd.pdf 

PD- 91777 IRG4PH20KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 3.17V Combines low conduction losses with high G switching speed @VGE = 15V, IC = 5.0A Tighter para

 5.1. Size:152K  international rectifier
 irg4ph20k.pdf 

PD -91776 IRG4PH20K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.17V G switching speed Latest generation design provides tighter parameter @VGE = 15V, IC = 5

 8.1. Size:339K  international rectifier
 irg4ph40ud.pdf 

PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher efficiency than previous generat

 8.2. Size:126K  international rectifier
 irg4ph50s.pdf 

PD -91712A IRG4PH50S I T D T I T I T I T Features Features Features Features Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies (

 8.3. Size:220K  international rectifier
 irg4ph50s-e.pdf 

PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies (

 8.4. Size:219K  international rectifier
 irg4ph40kd.pdf 

PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.74V Combines low conduction losses with high G switching speed

 8.5. Size:227K  international rectifier
 irg4ph50kd.pdf 

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed

 8.6. Size:349K  international rectifier
 irg4ph30kpbf.pdf 

PD - 95401 IRG4PH30KPbF Lead-Free www.irf.com 1 6/17/04 IRG4PH30KPbF 2 www.irf.com IRG4PH30KPbF www.irf.com 3 IRG4PH30KPbF 4 www.irf.com IRG4PH30KPbF www.irf.com 5 IRG4PH30KPbF 6 www.irf.com IRG4PH30KPbF www.irf.com 7 IRG4PH30KPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30

 8.7. Size:280K  international rectifier
 auirg4ph50s.pdf 

AUTOMOTIVE GRADE AUIRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features IC = 81A@ TC = 100 C Standard Optimized for minimum saturation G voltage and low operating frequencies (

 8.8. Size:676K  international rectifier
 irg4ph50kdpbf.pdf 

PD- 95189 IRG4PH50KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features C High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V G switching speed Tighter parameter distribution a

 8.9. Size:215K  international rectifier
 irg4ph30kd.pdf 

PD- 91579A IRG4PH30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 3.10V Combines low conduction losses with high G switching speed

 8.10. Size:751K  international rectifier
 irg4ph40kdpbf.pdf 

PD - 95402 IRG4PH40KDPbF Lead-Free www.irf.com 1 6/17/04 IRG4PH40KDPbF 2 www.irf.com IRG4PH40KDPbF www.irf.com 3 IRG4PH40KDPbF 4 www.irf.com IRG4PH40KDPbF www.irf.com 5 IRG4PH40KDPbF 6 www.irf.com IRG4PH40KDPbF www.irf.com 7 IRG4PH40KDPbF 8 www.irf.com IRG4PH40KDPbF www.irf.com 9 IRG4PH40KDPbF TO-247AC Package Outline Dimensions are shown in millimeters (inch

 8.11. Size:681K  international rectifier
 irg4ph50udpbf.pdf 

PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and higher efficiency than previous gener

 8.12. Size:166K  international rectifier
 irg4ph40u.pdf 

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous gene

 8.13. Size:127K  international rectifier
 irg4ph40s.pdf 

PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low on state voltage drop 1.0V typical at VCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC package VCE(on) typ. = 1.46V G @VGE = 15V, IC = 20A E N-channel Benefits High current density systems Optimized for specific app

 8.14. Size:229K  international rectifier
 irg4ph50ud.pdf 

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and hi

 8.15. Size:160K  international rectifier
 irg4ph40k.pdf 

D IRG4PH40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74V G switching speed Latest generation design provi

 8.16. Size:137K  international rectifier
 irg4ph50u.pdf 

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous gener

 8.17. Size:68K  international rectifier
 irg4ph50k.pdf 

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V, TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distr

 8.18. Size:299K  international rectifier
 irg4ph40ud2-e.pdf 

PD - 96781A IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast VCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use in G resonant circuits Indus

 8.19. Size:164K  international rectifier
 irg4ph30k.pdf 

D IRG4PH30K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.10V G switching speed Latest generation design provi