Справочник IGBT. IRG4PH30KD

 

IRG4PH30KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PH30KD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Максимальный постоянный ток коллектора (Ic): 10A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PH30KD

 

 

IRG4PH30KD Datasheet (PDF)

1.1. irg4ph30kd.pdf Size:212K _international_rectifier

IRG4PH30KD
IRG4PH30KD

PD- 91579A IRG4PH30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 3.10V Combines low conduction losses with high G switching speed @VGE =

1.2. irg4ph30k.pdf Size:161K _international_rectifier

IRG4PH30KD
IRG4PH30KD

D IRG4PH30K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.10V G switching speed Latest generation design provides tighter

 1.3. irg4ph30kd.pdf Size:215K _igbt_a

IRG4PH30KD
IRG4PH30KD

PD- 91579A IRG4PH30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 3.10V • Combines low conduction losses with high G switching speed

1.4. irg4ph30k.pdf Size:164K _igbt_a

IRG4PH30KD
IRG4PH30KD

 D IRG4PH30K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 3.10V G switching speed • Latest generation design provi

Другие IGBT... IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , P12N60C3 , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U .

 

 
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Список транзисторов

Обновления

IGBT: MBQ50T65FESC | GT40RR21 | MBQ40T120FES | GT20D201 | MGD633 | IKW30N65WR5 | 2PG001 | FGT612 | FGT412 | FGT313 |
 

 

 

 

 

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