IRG4PH40KD
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG4PH40KD
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 160
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
30
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.74
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 31
nS
Coesⓘ - Выходная емкость, типовая: 77
pF
Qgⓘ - Общий заряд затвора, typ: 94
nC
Тип корпуса:
TO247AC
Аналог (замена) для IRG4PH40KD
IRG4PH40KD
Datasheet (PDF)
..1. Size:219K international rectifier
irg4ph40kd.pdf 
PD- 91577BIRG4PH40KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.74V Combines low conduction losses with highG switching speed
0.1. Size:751K infineon
irg4ph40kdpbf.pdf 
PD - 95402IRG4PH40KDPbF Lead-Freewww.irf.com 16/17/04IRG4PH40KDPbF2 www.irf.comIRG4PH40KDPbFwww.irf.com 3IRG4PH40KDPbF4 www.irf.comIRG4PH40KDPbFwww.irf.com 5IRG4PH40KDPbF6 www.irf.comIRG4PH40KDPbFwww.irf.com 7IRG4PH40KDPbF8 www.irf.comIRG4PH40KDPbFwww.irf.com 9IRG4PH40KDPbFTO-247AC Package OutlineDimensions are shown in millimeters (inch
5.1. Size:160K international rectifier
irg4ph40k.pdf 
D IRG4PH40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74VG switching speed Latest generation design provi
6.1. Size:339K international rectifier
irg4ph40ud.pdf 
PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat
6.2. Size:166K international rectifier
irg4ph40u.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.43VG parameter distribution and higher efficiency than previous gene
6.3. Size:127K international rectifier
irg4ph40s.pdf 
PD -91808IRG4PH40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low on state voltage drop 1.0V typical atVCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC packageVCE(on) typ. = 1.46VG@VGE = 15V, IC = 20AEN-channelBenefits High current density systems Optimized for specific app
6.4. Size:299K international rectifier
irg4ph40ud2-e.pdf 
PD - 96781AIRG4PH40UD2-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast IGBT optimized for high operatingVCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafastVCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use inG resonant circuits Indus
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