MG1225H-XN2MM Даташит. Аналоги. Параметры и характеристики.
Наименование: MG1225H-XN2MM
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 147 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 30 nS
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MG1225H-XN2MM Datasheet (PDF)
mg1225h-xn2mm.pdf

Power Module1200V 25A IGBT ModuleRoHSMG1225H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
mg1225h-xbn2mm.pdf

Power Module1200V 25A IGBT ModuleRoHSMG1225H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff
mg12225wb-bn2mm.pdf

Power Module1200V 225A IGBT ModuleRoHSMG12225WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot
mg12200d-bn2mm.pdf

Power Module1200V 200A IGBT ModuleRoHSMG12200D-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplications
Другие IGBT... MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , RJP63F3DPP-M0 , MG12300D-BA1MM , MG12300D-BN2MM , MG12300D-BN3MM , MG12300WB-BN2MM , MG12400D-BN2MM , MG1240H-XBN2MM , MG12450WB-BN2MM , MG1250H-XN2MM .
History: APT15GT60KR | SPM1003 | DM2G150SH12AE | TT060U065FB
History: APT15GT60KR | SPM1003 | DM2G150SH12AE | TT060U065FB



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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