MG12300WB-BN2MM Даташит. Аналоги. Параметры и характеристики.
Наименование: MG12300WB-BN2MM
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1400 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 500 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 45 nS
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MG12300WB-BN2MM Datasheet (PDF)
mg12300wb-bn2mm.pdf

Power Module1200V 300A IGBT ModuleRoHSMG12300WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot
mg12300d-ba1mm.pdf

Power Module1200V 300A IGBT ModuleRoHSMG12300D-BA1MMFeatures Ultra low loss Positive temperature coefficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristic
mg12300d-bn3mm.pdf

Power Module1200V IGBT FamilyRoHSMG12300D-BN3MM Series 300A Dual IGBT Features High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT CHIP(1200V NPT with fast and soft reverse technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicat
mg12300d-bn2mm.pdf

Power Module1200V IGBT FamilyRoHSMG12300D-BN2MM Series 300A Dual IGBT Features High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficient
Другие IGBT... MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM , MG12300D-BA1MM , MG12300D-BN2MM , MG12300D-BN3MM , GT30G124 , MG12400D-BN2MM , MG1240H-XBN2MM , MG12450WB-BN2MM , MG1250H-XN2MM , MG1250S-BA1MM , MG1250W-XBN2MM , MG1275H-XN2MM , MG1275S-BA1MM .
History: GT15Q101 | IRG4BC30F | AFGB40T65SQDN | IXSN35N120AU1 | IXBF20N300 | GT30J322 | MSG15T120FPE
History: GT15Q101 | IRG4BC30F | AFGB40T65SQDN | IXSN35N120AU1 | IXBF20N300 | GT30J322 | MSG15T120FPE



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324