MG1275S-BA1MM - параметры транзистора, его аналоги, Даташиты

MG1275S-BA1MM Datasheet (PDF)

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Power Module1200V 75A IGBT ModuleRoHSMG1275S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

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Power Module1200V 75A IGBT ModuleRoHSMG1275W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren

8.2. Size:1841K littelfuse
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Power Module1200V 75A IGBT ModuleRoHSMG1275W-XBN2MM Features High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PCB coefficien

8.3. Size:1726K littelfuse
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Power Module1200V 75A IGBT ModuleRoHSMG1275H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren

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