Справочник IGBT. IRG4PH50K

 

IRG4PH50K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PH50K

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Максимальный постоянный ток коллектора (Ic): 24A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PH50K

 

 

IRG4PH50K Datasheet (PDF)

1.1. irg4ph50kd.pdf Size:224K _international_rectifier

IRG4PH50K
IRG4PH50K

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed @VGE =

1.2. irg4ph50k.pdf Size:92K _international_rectifier

IRG4PH50K
IRG4PH50K

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distributi

 1.3. irg4ph50kd.pdf Size:227K _igbt_a

IRG4PH50K
IRG4PH50K

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 2.77V • Combines low conduction losses with high G switching speed

1.4. irg4ph50k.pdf Size:68K _igbt_a

IRG4PH50K
IRG4PH50K

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distr

Другие IGBT... IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , G30N60C3 , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD .

 

 
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