Справочник IGBT. IRG4PH50U

 

IRG4PH50U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PH50U

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Максимальный постоянный ток коллектора (Ic): 24A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PH50U

 

 

IRG4PH50U Datasheet (PDF)

1.1. irg4ph50u.pdf Size:134K _international_rectifier

IRG4PH50U
IRG4PH50U

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous generations

1.2. irg4ph50ud.pdf Size:229K _international_rectifier

IRG4PH50U
IRG4PH50U

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and higher ef

 1.3. irg4ph50u.pdf Size:137K _igbt_a

IRG4PH50U
IRG4PH50U

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous gener

1.4. irg4ph50ud.pdf Size:229K _igbt_a

IRG4PH50U
IRG4PH50U

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V • New IGBT design provides tighter G parameter distribution and hi

Другие IGBT... IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IXGR32N60CD1 , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , IRG4PSH71K , IRG4PSH71KD , IRG4RC10K .

 

 
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