Справочник IGBT. MM40G3U65BN

 

MM40G3U65BN Даташит. Аналоги. Параметры и характеристики.


   Наименование: MM40G3U65BN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 61 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.75 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 35 nS
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

MM40G3U65BN Datasheet (PDF)

 ..1. Size:259K  macmic
mm40g3u65bn.pdfpdf_icon

MM40G3U65BN

MM40G3U65BN650V 40A IGBTJanuary 2021 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical

 4.1. Size:350K  macmic
mm40g3u65b.pdfpdf_icon

MM40G3U65BN

MM40G3U65B650V 40A IGBTMay 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appl

 7.1. Size:332K  macmic
mm40g3u120bx.pdfpdf_icon

MM40G3U65BN

MM40G3U120BX1200V 40A IGBTSeptember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical

 7.2. Size:332K  macmic
mm40g3u120b.pdfpdf_icon

MM40G3U65BN

MM40G3U120B1200V 40A IGBTSeptember 2019 Version 03 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical a

Другие IGBT... MM20G3R135B , MM20G3T135B , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , IRG4PC40W , MM50G3T120BM , MM50G3U120BMX , MM60G3U65B , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN .

History: BSM300GA120DN2 | STGFW30H65FB | AUIRGR4045D | APTGF50X120E2 | SGTP40V120FDB2P7 | BLG60T65FDK-K | IRGS4640D

 

 
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