MMG100H120H6HN - аналоги, основные параметры, даташиты
Наименование: MMG100H120H6HN
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 550 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
tr ⓘ - Время нарастания типовое: 65 nS
Тип корпуса: MODULE
Аналог (замена) для MMG100H120H6HN
- подбор ⓘ IGBT транзистора по параметрам
MMG100H120H6HN даташит
mmg100h120h6hn.pdf
MMG100H120H6HN 1200V 100A Four-Pack Module May 2015 Preliminary RoHS Compliant PRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
mmg100hb060h6en.pdf
MMG100HB060H6EN 600V 100A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb060b6en.pdf
MMG100HB060B6EN 600V 100A IGBT Module February 2017 Version 2 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb120h6hn.pdf
MMG100HB120H6HN 1200V 100A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
Другие IGBT... MM40G3U65B, MM40G3U65BN, MM50G3T120BM, MM50G3U120BMX, MM60G3U65B, MM75G3T65B, MMG100D170B, MMG100D170B6TC, IRG4PF50W, MMG100HB060B6EN, MMG100J120U6HN, MMG100J120U6T4N, MMG100J120U6TC, MMG100J120UZ6HN, MMG100J120UZ6T4N, MMG100J120UZ6TC, MMG100J120UZ6TN
History: MMG200W060X6EN | MMG300B065PD6TC
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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