MMG200D120B6TC datasheet, аналоги, основные параметры
Наименование: MMG200D120B6TC 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 1071 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 300 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
tr ⓘ - Время нарастания типовое: 56 nS
Тип корпуса: MODULE
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Аналог (замена) для MMG200D120B6TC
- подбор ⓘ IGBT транзистора по параметрам
MMG200D120B6TC даташит
mmg200d120b6tc.pdf
MMG200D120B6TC 1200V 200A IGBT Module July 2020 Version 02 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switch
mmg200d120b6tn.pdf
MMG200D120B6TN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses A
mmg200d120b6un.pdf
MMG200D120B6UN 1200V 200A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA
mmg200d120b6hn.pdf
MMG200D120B6HN 1200V 200A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
Другие IGBT... MMG150W060XB6EN, MMG150W120X6TC, MMG150WB170H6EN, MMG150WJ120XB6TC, MMG15CB120X6TC, MMG15CB120XB6TC, MMG15CB120XB6TN, MMG200B065PD6EN, RJH3047, MMG200D120B6UC, MMG200D120UA6TC, MMG200D120UA6TN, MMG200D120UK6TN, MMG200D170B, MMG200D170B6TC, MMG200Q120B6TC, MMG200Q120UA6TC
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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